“Silicon carbide can carry a substantial advantage, basically a 5% to 10% advancement in assortment,�?In line with Stephan Zizala, the head of Infineon’s automotive high-power alternatives group. Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that creates wafer-scale, single-orientation graphene on an insulating substrate. It is https://www.pinterest.com/macrocosmmaterial/